cmps5061 cmps5062 cmps5063 cmps5064 surface mount silicon controlled rectifier description: the central semiconductor cmps5061 series types are epoxy molded pnpn silicon controlled rectifiers manufactured in an sot-23 case, designed for control systems and sensing circuit applications. marking code: cmps5061: p2a cmps5062: p2b cmps5063: p2c cmps5064: p2d sot-23 case maximum ratings: (t a =25c) symbol cmps5061 cmps5062 cmps5063 cmps5064 units peak repetitive off-state voltage v drm 100 200 300 400 v peak repetitive reverse voltage v rrm 100 200 300 400 v rms on-state current i t(rms) 0.25 a average on-state current i t(av) 0.16 a power dissipation p d 350 mw operating junction temperature t j -65 to +125 c storage temperature t stg -65 to +150 c thermal resistance ja 286 c/w electrical characteristics: (t a =25c) symbol test conditions min max min max min max min max units i drm v d =rated v drm , r gk =1.0k - 1.0 - 1.0 - 1.0 - 1.0 a i rrm v d =rated v drm , r gk =1.0k - 1.0 - 1.0 - 1.0 - 1.0 a i drm v d =rated v drm , r gk =1.0k, t c =125c - 50 - 50 - 50 - 50 a i rrm v d =rated v drm , r gk =1.0k, t c =125c - 50 - 50 - 50 - 50 a v tm i t =1.2a - 1.7 - 1.7 - 1.7 - 1.7 v i gt v d =7.0v, r l =100 - 200 - 200 - 200 - 200 a v gt v d =7.0v, r l =100 - 0.8 - 0.8 - 0.8 - 0.8 v v gd v d = rated v drm , r l =100, t c =125c 0.1 - 0.1 - 0.1 - 0.1 - v i h r gk =1.0k - 5.0 - 5.0 - 5.0 - 5.0 ma t on v d = rated v drm , i gt =1.0ma, r gk =1.0k, di/dt=6.0a/s 2.8 typ 2.8 typ 2.8 typ 2.8 typ s cmps5061 cmps5062 cmps5063 cmps5064 r10 (11-february 2011) www.centralsemi.com
cmps5061 cmps5062 cmps5063 cmps5064 surface mount silicon controlled rectifier lead code: 1) cathode 2) gate 3) anode marking codes: cmps5061: p2a cmps5062: p2b cmps5063: p2c cmps5064: p2d sot-23 case - mechanical outline www.centralsemi.com r10 (11-february 2011)
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